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FinFETs are next
generation transistors, which utilize tri-gate structure. In contrast to planar
transistors where the Gate electrode was usually above the channel, in FinFET the
Gate electrode “wraps” the channel from three sides providing improved
electrostatic control over the channel.


FinFETs have the following advantages over bulk MOSFETs:

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consumption- Very less leakage and parasitic current leading to less static

Voltage- FinFETs operate at a lower voltage as a result of their lower
threshold voltage.

No Short channel
effect- Excellent electrostatic control of the channel 15.

No Body effects
in FinFETs when compared to planar CMOS.

·       The
realization of self-aligned double-gate devices in FinFET with a conventional
CMOS process is attractive 7.


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